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INTEGRATED CIRCUITS
DATA SHEET
UAA2077CM 2 GHz image rejecting front-end
Product specification Supersedes data of 1996 Oct 02 File under Integrated Circuits, IC17 1997 Sep 24
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
FEATURES * Low-noise, wide dynamic range amplifier * Very low noise figure * Dual balanced mixer for over 30 dB on-chip image rejection * IF I/Q combiner at 188 MHz * On-chip quadrature network * Down-conversion mixer for closed-loop transmitters * Independent TX/RX fast ON/OFF power-down modes * Very small outline packaging * Very small application (no image filter). APPLICATIONS * High frequency front-end for DCS1800/PCS1900 hand-portable equipment * Compact digital mobile communication equipment * TDMA receivers e.g. RF-LANS. GENERAL DESCRIPTION UAA2077CM contains both a receiver front-end and a high frequency transmit mixer intended to be used in mobile telephones. Designed in an advanced BiCMOS process it combines high performance with low power consumption and a high degree of integration, thus reducing external component costs and total front-end size. The main advantage of the UAA2077CM is its ability to provide over 30 dB of image rejection. Consequently, the image filter between the LNA and the mixer is suppressed. QUICK REFERENCE DATA SYMBOL VCC ICC(RX) ICC(TX) ICC(PD) Tamb supply voltage receive supply current transmit supply current supply current in power-down operating ambient temperature PARAMETER MIN. 3.6 27.5 11 - -30 36 14 - +25 TYP. 3.75
UAA2077CM
Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two all-pass filters in I and Q IF channels that phase shift the IF by 45 and 135 respectively. The two phase shifted IFs are recombined and buffered to furnish the IF output signal. Signals presented at the RF input at LO + IF frequency are rejected through this signal processing while signals at LO - IF frequency can form the IF signal. The receiver section consists of a low-noise amplifier that drives a quadrature mixer pair. The IF amplifier has on-chip 45 and 135 phase shifting and a combining network for image rejection. The IF driver has differential open-collector type outputs. The LO part consists of an internal all-pass type phase shifter to provide quadrature LO signals to the receive mixers. The all-pass filters outputs are buffered before being fed to the receive mixers. The transmit section consists of a low-noise amplifier, and a down-conversion mixer. In the transmit mode, an internal LO buffer is used to drive the transmit IF down-conversion mixer. All RF and IF inputs or outputs are balanced. Pins RXON, TXON and SXON allow to control the different power-down modes. A synthesizer-on (SX) mode enables LO buffers independent of the other circuits. When pin SXON is HIGH, all internal buffers on the LO path of the circuit are turned on, thus minimizing LO pulling when remainder of the receive or transmit chain is powered up. Special care has been taken for fast power-up switching.
MAX. 5.3 44.5 17.5 50 +75 V
UNIT mA mA A C
1997 Sep 24
2
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
ORDERING INFORMATION TYPE NUMBER UAA2077CM PACKAGE NAME SSOP20 DESCRIPTION plastic shrink small outline package; 20 leads; body width 4.4 mm
UAA2077CM
VERSION SOT266-1
BLOCK DIAGRAM
n.c.
handbook, full pagewidth
n.c. 7
TXON 11 MIXER
RXON 12 +45o
SXON 9
SBS 10
4 3
UAA2077CM
VCCLNA
17 RFINA RFINB 5 6 LNA low-noise amplifier +135o IF COMBINER 18 8
IFA
IFB
LNAGND
RECEIVE SECTION
VCCLO 15
TRANSMIT SECTION
LOGND
16
QUADRATURE PHASE SHIFTER
MIXER 19 20 TXOA TXOB
LOCAL OSCILLATOR SECTION
14 LOINA 13 LOINB 2 1
MGD285
TXINB TXINA
Fig.1 Block diagram.
1997 Sep 24
3
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
PINNING SYMBOL TXINA TXINB VCCLNA n.c. RFINA RFINB n.c. LNAGND SXON SBS TXON RXON LOINB LOINA VCCLO LOGND IFA IFB TXOA TXOB PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 DESCRIPTION transmit mixer input A (balanced) transmit mixer input B (balanced) supply voltage for LNA, IF parts and TX mixer not connected RF input A (balanced) RF input B (balanced) not connected ground for LNA, IF parts and TX mixer SX mode enable (see Table 1) sideband selection (should be grounded for fLO < fRF) TX mode enable (see Table 1) RX mode enable (see Table 1) LO input B (balanced) LO input A (balanced) supply voltage for LO parts ground for LO parts IF output A (balanced) IF output B (balanced) transmit mixer IF output A (balanced) transmit mixer IF output B (balanced)
VCCLNA n.c. RFINA RFINB n.c. LNAGND SXON 3 4 5
handbook, halfpage
UAA2077CM
TXINA TXINB
1 2
20 TXOB 19 TXOA 18 IFB 17 IFA 16 LOGND
UAA2077CM
6 7 8 9 15 VCCLO 14 LOINA 13 LOINB 12 RXON 11 TXON
MGD286
SBS 10
Fig.2 Pin configuration.
1997 Sep 24
4
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
FUNCTIONAL DESCRIPTION Receive section The circuit contains a low-noise amplifier followed by two high dynamic range mixers. These mixers are of the Gilbert-cell type, the whole internal architecture is fully differential. The local oscillator, shifted in phase to 45 and 135, mixes the amplified RF to create I and Q channels. The two I and Q channels are buffered, phase shifted by 45 and 135 respectively, amplified and recombined internally to realize the image rejection. Pin SBS allows sideband selection: * fLO > fRF (SBS = 1) * fLO < fRF (SBS = 0). Where fRF is the frequency of the wanted signal.
UAA2077CM
Balanced signal interfaces are used for minimizing crosstalk due to package parasitics. The IF output is differential and of the open-collector type. Typical application will load the output with a 680 resistor load at each IF output, plus a differential 1 k load made of the input impedance of the IF filter or the input impedance of the matching network for the IF filter. The power gain refers to the available power on this 1 k load. The path to VCC for the DC current should be achieved via tuning inductors. The output voltage is limited to VCC + 3Vbe or 3 diode forward voltage drops. Fast switching, ON/OFF, of the receive section is controlled by the hardware input RXON.
SBS
handbook, full pagewidth
VCCLNA
MIXER
IF amplifier
+45o
IFA RFINA RFINB LNA LNAGND IF amplifier +135o
MGD754
MIXER
IF COMBINER IFB
LOIN
RXON
Fig.3 Block diagram, receive section.
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5
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
Local oscillator section The Local Oscillator (LO) input directly drives the two internal all-pass networks to provide quadrature LO to the receive mixers. A synthesizer-ON mode (SX mode) is used to power-up all LO input buffers, thus minimizing the pulling effect on the external VCO when entering receive or transmit mode. This mode is active when SXON = 1. Transmit mixer This mixer is used for down-conversion to the transmit IF. Its inputs are coupled to the transmit RF which is
UAA2077CM
down-converted to a modulated transmit IF frequency, phase locked with the baseband modulation. The IF outputs are HIGH impedance (open-collector type).Typical application will load the output with a 560 resistor load, connected to VCC for DC path, at each TX output, plus a differential 1 k made of the input impedance of the matching network for the following TX part. The mixer can also be used for frequency up-conversion. Fast switching, ON/OFF, of the transmit section is controlled by the hardware input TXON.
to RX
handbook, halfpage
VCCLO
handbook, halfpage
TX MIXER TXOA TXOB
LOIN QUAD
MGD153
LOGND
to TX
MGD287
TXON TXINB TXINA
SXON LOINA
LOINB
Fig.4 Block diagram, LO section.
Fig.5 Block diagram, transmit mixer.
Table 1 Control of power status EXTERNAL PIN LEVEL CIRCUIT MODE OF OPERATION TXON LOW LOW HIGH LOW LOW HIGH HIGH RXON LOW HIGH LOW LOW HIGH LOW HIGH SXON LOW LOW LOW HIGH HIGH HIGH X power-down mode RX mode: receive section and LO buffers to RX on TX mode: transmit section and LO buffers to TX on SX mode: complete LO section on SRX mode: receive section on and SX mode active STX mode: transmit section on and SX mode active receive section and transmit section on; specification not guaranteed
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC GND Pi(max) Tj(max) Pdis(max) Tstg supply voltage difference in ground supply voltage applied between LOGND and LNAGND maximum power input maximum operating junction temperature maximum power dissipation in quiet air storage temperature PARAMETER - - - - - -65 MIN.
UAA2077CM
MAX. 9 0.6 +20 +150 250 +150 V V
UNIT
dBm C mW C
THERMAL CHARACTERISTICS SYMBOL Rth j-a HANDLING All pins withstand 1500 V ESD test in accordance with "MIL-STD-883C class 1 (method 3015.5)". PARAMETER thermal resistance from junction to ambient in free air VALUE 120 UNIT K/W
1997 Sep 24
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
DC CHARACTERISTICS VCC = 3.75 V; Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN.
UAA2077CM
TYP.
MAX.
UNIT
Pins: VCCLNA and VCCLO VCC ICC(RX) ICC(TX) ICC(PD) ICC(SX) ICC(SRX) ICC(STX) Vth VIH VIL IIH IIL VI IO VI IO VLOIN Note 1. The referenced inputs should be connected to a valid CMOS input level. supply voltage supply current in RX mode supply current in TX mode supply current in power-down mode supply current in SX mode supply current in SRX mode supply current in STX mode over full temperature range 3.6 27.5 11 - 6.5 29.5 15 - 0.7VCC -0.3 pins at VCC - 0.4 V pins at 0.4 V -1 -1 3.75 36 14 - 8.5 38.5 19.5 5.3 44.5 17.5 50 10.5 47.5 24 - VCC +0.8 +1 +1 V mA mA A mA mA mA
Pins: RXON, TXON, SXON and SBS CMOS threshold voltage HIGH level input voltage LOW level input voltage HIGH level static input current LOW level static input current note 1 1.25 - - - - V V V A A
Pins: RFINA and RFINB DC input voltage level receive section on 1.8 2.0 2.2 V
Pins: IFA and IFB DC output current receive section on 2.3 3.0 3.8 mA
Pins: TXINA and TXINB DC input voltage level transmit section on 1.9 2.15 2.4 V
Pins: TXOA and TXOB DC output current transmit section on 0.8 1.0 1.2 mA
Pins: LOINA and LOINB DC input voltage level RXON, TXON or SXON HIGH 2.6 2.9 3.2 V
1997 Sep 24
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
AC CHARACTERISTICS VCC = 3.75 V; Tamb = -30 to +75 C; foRX = 188 MHz; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - -
UAA2077CM
TYP.
MAX. - -
UNIT pF
Receive section (receive section enabled) RiRX CiRX RF input resistance (real part of the parallel input impedance) RF input capacitance (imaginary part of the parallel input impedance) RF input frequency return loss on matched RF input conversion power gain balanced; note 1 differential RF inputs to differential IF outputs loaded to 1 k differential within 100 MHz bandwidth; note 2 note 2 differential RF inputs to differential IF outputs; note 1 interferer frequency offset: 3 MHz; Pin = -26 dBm; interferer frequency offset: 20 MHz, Pin = -23 dBm differential RF inputs to differential IF outputs; note 1 differential RF inputs to differential IF outputs; note 2 differential RF inputs to differential IF outputs; note 2 differential RF inputs to differential IF outputs Tamb = 25 C; DCS frequency range; note 3 Tamb = 25 C; PCS frequency range; notes 2 and 3 Tamb = -30 to +65 C; PCS frequency range; notes 2 and 3 ZLRX RLoRX foRX IR typical application IF output load impedance IF frequency range rejection of image frequency fRF > fLO; fRF is the frequency of the wanted signal balanced - - - - 15 - 30 3.8 4.0 - 1000 20 188 38 - 4.4 5.0 - - - - dB dB dB dB MHz dB balanced; at 1960 MHz balanced; at 1960 MHz 60 0.8
fiRX RLiRX GCPRX
1805 15 19
- 20 22
1990 - 25
MHz dB dB
Grip G/T CP1RX DES
gain ripple as a function of RF frequency gain variation with temperature 1 dB compression point desensitisation
- -10 -25.5 -
0.2 -15 -24 -
0.5 -20 - 5
dB mdB/K dB dB
IP2DRX
half IF spurious attenuation for -52 dBm input power (fRF = fLO + 0.5 x fIF) 3rd order intercept point overall noise figure
37
-
-
dB
IP3RX NFRX
-21.5
-17
-
dBm
return loss on matched IF output balanced; note 1
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. - 90 5
MAX.
UNIT
Local oscillator section (receive section enabled) fiLO RiLO CiLO LO input frequency LO input resistance (real part of the parallel input impedance) LO input inductance (imaginary part of the parallel input impedance) return loss on matched input (including standby mode) return loss variation between SX, SRX and STX modes LO input power level reverse isolation LOIN to RFIN at LO frequency; note 2 balanced; at 1770 MHz balanced; at 1770 MHz 1617 - - 1802 - - MHz nH
RLiLO RLiLO PiLO RILO
note 1 linear S11 variation; note 1
10 - -10 40
15 20 -6 -
- - 0 -
dB mU dBm dB
Transmit section (transmit section enabled) ZLTX RLoTX RiTX TX IF typical load impedance return loss on matched transmitter IF output TX RF input resistance (real part of the parallel input impedance) TX RF input capacitance (imaginary part of the parallel input impedance) TX mixer input frequency return loss on matched TX input conversion power gain note 1 differential transmitter inputs to differential transmitter IF outputs loaded with 500 differential note 1 note 2 note 2 double sideband; notes 2 and 3 LOIN to TXIN; note 2 TXIN to LOIN; note 2 balanced note 1 balanced; at 1880 MHz - 11 - 500 15 60 - - - dB
CiTX
balanced; at 1880 MHz
-
1
-
pF
fiTX RLiTX GCPTX
1600 10 6
- 15 9
2000 - 12
MHz dB dB
foTX CP1TX IP2TX IP3TX NFTX ITX RITX Timing tstu Notes
TX output frequency 1 dB input compression point 2nd order intercept point 3rd order intercept point noise figure isolation reverse isolation
50 -25 - -20 - 40 38
- -22 +22 -16 5 - -
400 - - - 9 - -
MHz dBm dBm dBm dB dB dB s
start-up time of each block
1
5
20
1. Measured and guaranteed only on UAA2077CM PCS demonstration board at Tamb = 25 C. 2. Measured and guaranteed only on UAA2077CM PCS demonstration board. 3. This value includes printed-circuit board and balun losses.
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
INTERNAL PIN CONFIGURATION PIN 1 SYMBOL TXINA DC VOLTAGE (V) 2.15 EQUIVALENT CIRCUIT
UAA2077CM
VCC
2
TXINB
2.15
5
RFINA
2.0
1, 5
2, 6
6
RFINB
2.0
GND
MGL205
3 8 9 10 11 12 13
VCCLNA LNAGND SXON SBS
3.75 0
VCC
9, 10, 11, 12
TXON RXON LOINB 2.9
GND
MGL204
VCC
14
LOINA
2.9
13
14
GND
MGL206
15 16
VCCLO LOGND
3.75 0
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
PIN 17
SYMBOL IFA
DC VOLTAGE (V)
EQUIVALENT CIRCUIT
VCC
17
18
18
IFB
GND
GND
MGL207
19
TXOA
VCC
19
20
20
TXOB
GND
MGL208
1997 Sep 24
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Figure 6 illustrates the electrical diagram of the UAA2077CM Philips demonstration board for PCS1900 applications. For measurement purposes all matching is to 50 . Different values will be used in a real application.
UAA2077CM
Product specification
Fig.6 Application diagram.
handbook, full pagewidth
1997 Sep 24
12 pF C12 22 pF R1 560 C4 120 pF C11 120 pF C10 5.6 pF 12 pF C26 L4 120 nH C13 22 pF TXOUT 93 MHz 3.75 V R2 560 1 2 C5 82 pF 4 5 16 3.75 V C23 5.6 pF C24 IFB 17 R6 680 C22 IFA 82 pF 56 nH L13 IF 188 MHz C25 12 pF L14 56 nH 3.75 V 9 10 560 k TXON RXON 2 C20 1.5 pF L9 4.7 nH C21 1.5 pF LOIN 1742 to 1817 MHz 3.75 V
MGD288
L8 4.7 nH L3 180 nH L2 180 nH L5 120 nH
Philips Semiconductors
C18
C16 1.8 pF
TXIN 1850 to 1910 MHz 20 19 18 L11 82 nH
L7 4.7 nH
8.2 pF C17
APPLICATION INFORMATION
8.2 pF
C15 1.8 pF 3
3.75 V
L6 4.7 nH
C6 8.2 pF
C1 8.2 pF
2 GHz image rejecting front-end
C2 6 7 8 12 11 1.5 pF 8.2 pF C19 C29 8.2 pF 2 13 14 15 R7 680 L12 82 nH
1.2 pF
RFIN 1930 to 1990 MHz L15 8.2 nH
UAA2077CM
L1
4.7 nH
C3
8.2 pF
13
1 C7 8.2 pF 1 R3 560 k C9 8.2 pF R5 560 k
C14 1.2 pF
SBS
C27 8.2 pF
C28 1 nF
SXON
8.2 pF
2
L10 4.7 nH
1
C8 8.2 pF
R4 560 k
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
UAA2077CM
SOT266-1
D
E
A X
c y HE vM A
Z
20
11
Q A2 pin 1 index A1 (A 3) Lp L A
1
e bp
10
detail X wM
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.5 A1 0.15 0 A2 1.4 1.2 A3 0.25 bp 0.32 0.20 c 0.20 0.13 D (1) 6.6 6.4 E (1) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1.0 Lp 0.75 0.45 Q 0.65 0.45 v 0.2 w 0.13 y 0.1 Z (1) 0.48 0.18 10 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT266-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 90-04-05 95-02-25
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
UAA2077CM
If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1997 Sep 24
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
UAA2077CM
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
NOTES
UAA2077CM
1997 Sep 24
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
NOTES
UAA2077CM
1997 Sep 24
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
NOTES
UAA2077CM
1997 Sep 24
19
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
437027/1200/02/pp20
Date of release: 1997 Sep 24
Document order number:
9397 750 02731

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